all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 10 rev. 02.1, 2015-06-18 pxac180602md thermally-enhanced high power rf ldmos fet 60 w, 28 v, 1805 C 1880 mhz description the pxac180602md is a 60-watt ldmos fet with an asym - metrical design intended for use in multi-standard cellular power amplifer applications in the 1805 to 1880 mhz frequency band. features include dual-path design, input matching, high gain and thermally-enhanced package with earless fanges. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. rf characteristics single-carrier wcdma specifications (tested in infineon production doherty test fixture) v dd = 28 v, i dq = 80 ma, p out = 8.9 w avg, v gspk = 160 maC1.3 v, ? 1 = 1840 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 10 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 16.5 17.7 db drain effciency h d 51.0 54.5 % adjacent channel power ratio acpr C27.6 C25 dbc features ? broadband internal input and output matching ? asymmetric doherty design - main : p1db = 20 w typ - peak : p1db = 40 w typ ? typical pulsed cw performance, 1880 mhz, 28 v, 160 s pulse width, 10% duty cycle, class ab, doherty confguration - output power at p 1db = 10 w - effciency = 58% - gain at p 3db = 19 db ? integrated esd protection ? human body model, class 1b (per ansi/esda/ jedec js-001) ? low thermal resistance ? pb-free and rohs compliant -75 -50 -25 0 25 50 75 0 4 8 12 16 20 24 27 31 35 39 43 47 efficiency (%) peak/average ratio, gain (db) average output power (dbm) single - carrier wcdma drive - up v dd = 28 v, i dq = 80 ma, ? = 1880 mhz 3gpp wcdma signal, par = 10 db, 3.84 mhz bw gain efficiency par @ 0.01% ccdf pxac180602md_g1 pxac180602md package pg-hb1dso-4-1
data sheet 2 of 10 rev. 02.1, 2015-06-18 pxac180602md dc characteristics (each side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1 a v ds = 63 v, v gs = 0 v i dss 10 a on-state resistance (main) v gs = 10 v, v ds = 0.1 v r ds(on) 0.76 w on-state resistance (peak) v gs = 10 v, v ds = 0.1 v r ds(on) 0.36 w operating gate voltage (main) v ds = 26 v, i dq = 80 ma v gs 2.3 2.6 3.0 v operating gate voltage (peak) v ds = 26 v, i dq = 0 ma v gs 0.8 1.4 1.8 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg C65 to +150 c thermal resistance (doherty, t case = 70c, 55 w cw) r qjc 2.4 c/w ordering information type and version order code package description shipping pxac180602md v1 r500 pxac180602mdv1r500xuma1 pg-hb1dso-4-1 tape & reel, 500 pcs
pxac180602md data sheet 3 of 10 rev. 02.1, 2015-06-18 typical performance (data taken in a production doherty test fxture) 10 20 30 40 50 60 70 -70 -60 -50 -40 -30 -20 -10 27 31 35 39 43 47 efficiency(%) acp up & low (dbc) average output power (dbm) single - carrier wcdma drive - up v dd = 28 v, i dq = 80 ma, ? = 1880 mhz, 3gpp wcdma signal, par = 10 db, bw = 3.84 mhz efficiency acp up acp low pxac180602md_g2 35 40 45 50 55 60 15 16 17 18 19 20 1700 1750 1800 1850 1900 1950 2000 efficiency (%) gain (db) frequency (mhz) single - carrier wcdma broadband performance v dd = 28 v, i dq = 80 ma, p out = 39.5dbm, 3gpp wcdma signal, par = 10 db efficiency gain pxac180602md_g3 -30 -25 -20 -15 -10 -5 -35 -30 -25 -20 -15 -10 1700 1750 1800 1850 1900 1950 2000 return loss (db) acp up (dbc) frequency (mhz) single - carrier wcdma broadband performance v dd = 28 v, i dq = 80 ma, p out = 39.5dbm, 3gpp wcdma signal, par = 10 db acp up irl pxac180602md_g4 10 20 30 40 50 60 70 10 12 14 16 18 20 22 29 33 37 41 45 49 efficiency (%) gain (db) output power (dbm) cw performance v dd = 28 v, i dq = 80ma 1805 gain 1842.5 gain 1880 gain 1805 eff 1842.5 eff 1880 eff efficiency gain pxac180602md_g5
data sheet 4 of 10 rev. 02.1, 2015-06-18 pxac180602md typical performance (cont.) 10 20 30 40 50 60 70 10 12 14 16 18 20 22 27 31 35 39 43 47 51 efficiency (%) gain (db) output power (dbm) cw performance at various v dd i dq = 80 ma, ? = 1880 mhz v dd = 32 v v dd = 24 v v dd = 28 v v dd = 32 v gain efficiency pxac180602md_g6 -18 -14 -10 -6 -2 12 14 16 18 20 1700 1750 1800 1850 1900 1950 2000 input return loss (db) gain (db) frequency (mhz) small signal cw gain & input return loss v dd = 28 v, i dq = 80 ma irl gain pxac180602md_g7
pxac180602md data sheet 5 of 10 rev. 02.1, 2015-06-18 load pull performance C p 1db load pull performance C p 3db main side load pull performance C cw signal: v dd = 28 v, i dq = 85 ma, class ab p 1db max output power max pae freq [mhz] zs [ w] zl [w] gain [db] p out [dbm] p out [w] pae [%] zl [w] gain [db] p out [dbm] p out [w] pae [%] 1805 7.3-j16.9 8.8-j10.33 20.55 43.62 23 63.4 12.8-j1.9 21.86 41.73 14.89 70.8 1843 6.6-j18.9 8.4-j10.4 20.71 43.29 21.33 60.8 11.8-j4.4 22.12 42.10 16.22 69.6 1880 8.3-j21.5 7.5-j9.3 20.67 43.30 21.38 63.4 9.3-j3.9 21.86 41.87 15.38 69.4 peak side load pull performance C cw signal: v dd = 28 v, v gspk = 1.4 v p 1db max output power max pae freq [mhz] zs [ w] zl [w] gain [db] p out [dbm] p out [w] pae [%] zl [w] gain [db] p out [dbm] p out [w] pae [%] 1805 13.5 C j0.7 5.2 C j8.4 16.92 46.35 43.15 63.8 9.9 C j8.0 17.51 45.09 32.28 72.3 1842 7.7 C j0.2 4.7 C j8.4 16.8 46.43 43.95 63.3 9.0 C j7.1 17.47 45.14 32.66 72.7 1880 4.8 C j0.2 4.4 C j8.5 16.7 46.42 43.85 62.8 8.6 C j6.8 17.36 44.99 31.55 72.4 main side load pull performance C cw signal: v dd = 28 v, i dq = 85 ma, class ab p 3db max output power max pae freq [mhz] zs [ w] zl [w] gain [db] p out [dbm] p out [w] pae [%] zl [w] gain [db] p out [dbm] p out [w] pae [%] 1805 7.3-j16.9 9.0-j11.7 18.65 44.30 26.92 63.8 13.1-j7.1 19.78 43.28 21.28 70.8 1843 6.6-j18.9 9.0-j11.7 19 43.98 25 62.0 11.5-j5.9 20 42.94 19.68 69.5 1880 8.3-j21.5 8.9-j11.9 19.26 43.89 24.5 61.7 11.1-j6.4 20.2 42.91 19.54 69.0 peak side load pull performance C cw signal: v dd = 28 v, v gspk = 1.4 v p 3db max output power max pae freq [mhz] zs [ w] zl [w] gain [db] p out [dbm] p out [w] pae [%] zl [w] gain [db] p out [dbm] p out [w] pae [%] 1805 13.5 C j0.7 5.1 C j9.2 14.94 47.00 50.12 64.4 10.0 C j8.3 15.52 45.58 36.14 71.6 1842 7.7 C j0.2 5.0 C j9.2 14.9 47.00 50.1 64.6 9.3 C j7.7 15.45 45.67 36.9 72.0 1880 4.8 C j0.2 4.6 C j9.35 14.72 47.00 50.1 63.3 8.1 C j7.2 15.37 45.74 37.5 71.6
data sheet 6 of 10 rev. 02.1, 2015-06-18 pxac180602md reference circuit , 1805 C 1880 mhz reference circuit assembly diagram (not to scale) pxac180602md-06 c102 rf_in rf_out v dd p x a c 1 8 0 6 0 2 m d _ c d _ 0 2 - 1 8 - 2 0 1 5 c101 c103 c105 c104 r 101 c108 c106 r 103 ro 4350 , 0 .508 (201) c110 + r 802 s 1 s 3 r 801 c801 c 802 r 803 r 102 + r 804 s 2 s 4 s 5 r 805 c803 c804 c805 r 806 r 104 r 105 c111 c109 c112 c113 c115 c114 c 116 c118 c 117 c107 v dd v gspeak v gsmain
pxac180602md data sheet 7 of 10 rev. 02.1, 2015-06-18 reference circuit (cont.) pin description d1 drain device 1 (peak) d2 drain device 2 (main) g1 gate device 1 (peak) g2 gate device 2 (main) s source (fange) pinout diagram (top view) lead connections for pxac180602md pg _hb 1 dso - 4 _gw _pd _02 - 18 - 2015 s g1 g2 d1 d2 main peak reference circuit assembly dut pxac180602md v1 test fixture part no. lta/pxac180602md v1 pcb rogers 4350, 0.508 mm [0.020] thick, 2 oz. copper, r = 3.66, ? = 1805 C 1880 mhz find gerber files for this test fixture on the infineon web site at http://www.infineon.com/rfpower components information component description suggested manufacturer p/n input c101, c107 capacitor, 10 f taiyo yuden umk325c7106mm-t c102, c103, c106, c108 capacitor, 24 pf atc atc100a240jw150xb c104 capacitor, 2.4 pf atc atc100a2r4cw150xb c105 capacitor, 15 pf atc atc100a150jw150xb c801, c802, c803, c804, c805 capacitor, 1000 pf panasonic electronic components ecj-1vb1h102k r101, r103 resistor, 10 w panasonic electronic components erj-3geyj100v r102, r104 resistor, 0.0 w panasonic electronic components erj-8gey0r00v r105 resistor, 50 w anaren c16a50z4 r801, r805 resistor, 100 w panasonic electronic components erj-8geyj101v r802, r803, r804 resistor, 10 w panasonic electronic components erj-8geyj100v r806 resistor, 1.3k panasonic electronic components erj-3geyj132v s1, s2 potentiometer, 2k w bourns inc. 3224w-1-202e s3, s4 voltage regulator texas instruments lm78l05acm s5 transistor infineon technologies bcp56 output c109, c110, c116, c117 capacitor, 10 f taiyo yuden umk325c7106mm-t c112, c113, c114, c115 capacitor, 24 pf atc atc100a240jw150xb c111, c118 capacitor, 100 f panasonic electronic components eee-fp1v101ap
data sheet 8 of 10 rev. 02.1, 2015-06-18 pxac180602md package outline specifications package pg-hb1dso-4 with formed leads viewy 2x 0. 50 3.45 6. 91 3.00 16. 26 18. 44 2. 2. 1. 19 . 44 4 x 4.90 2 x 6.55 4x 3. 99 3.28 2 x 1.65 2x 2. 02 14. 94 0. 15 0. 50 x 45 1 . 9.02 y 0 . 25 1 . 02 1. 00 2x 13 . 05 4.00 4 x 7 2 x 10 4x 1 . 02 2. 62 1.86 r 0 . 45 0...0. 1 5 3 1 . 27 pg - hb 1 dso - 4 _ 01 _ 02 - 13 - 2015 d1 d 2 g1 g2 d1 d2 g1 g2 s 0. 10 max. 2x 0 . 35 diagram notesCunless otherwise specifed: 1. mold/dam bar/metal protusion of 0.30mm max per side not included. 2. metal protrusion are connected to source and shall not exceed 0.10mm max. 3. fillets and radii: all radii are 0.3 mm max. 4.interpret dimensions and tolerances per iso 8015. 5. dimensions are mm. 6. exposed metal surface pre-plated, may not be covered by mold compound. 7. all tolerances 0.1mm unless specifed otherwise. 8. all metal surfaces pre-plated, except area of cut. 9. lead thickness: 0.25 mm. 10. gold plating thickness: 0.25 micron [10 microinch] max. 11. pins: d1, d2 C drain; g1, g2 C gate; s C source.
pxac180602md data sheet 9 of 10 rev. 02.1, 2015-06-18 find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower package outline specifications (cont.) package pg-hb1dso-4 with formed leads (bottom side) diagram notesCunless otherwise specifed: 1. mold/dam bar/metal protusion of 0.30mm max per side not included. 2. metal protrusion are connected to source and shall not exceed 0.10mm max. 3. fillets and radii: all radii are 0.3 mm max. 4.interpret dimensions and tolerances per iso 8015. 5. dimensions are mm. 6. exposed metal surface pre-plated, may not be covered by mold compound. 7. all tolerances 0.1mm unless specifed otherwise. 8. all metal surfaces pre-plated, except area of cut. 9. lead thickness: 0.25 mm. 10. gold plating thickness: 0.25 micron [10 microinch] max. 11. pins: d1, d2 C drain; g1, g2 C gate; s C source. viewy 2x 0. 50 3.45 6. 91 3.00 16. 26 18. 44 2. 2. 1. 19 . 44 4 x 4.90 2 x 6.55 4x 3. 99 3.28 2 x 1.65 2x 2. 02 14. 94 0. 15 0. 50 x 45 1 . 9.02 y 0 . 25 1 . 02 1. 00 2x 13 . 05 4.00 4 x 7 2 x 10 4x 1 . 02 2. 62 1.86 r 0 . 45 0...0. 1 5 3 1 . 27 pg - hb 1 dso - 4 _ 01 _ 02 - 13 - 2015 d1 d 2 g1 g2 d1 d2 g1 g2 s 0. 10 max. 2x 0 . 35
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